The 1 6kw power is large enough to supply a desktop pc with a large microprocessor and several energy consuming graphic cards.
Gan power supply.
Lmg3410r070 600 v 70 mω gan with integrated driver and protection.
Gan power transistors are manufactured by growing layers of gan and algan aluminum gan on silicon substrates the same as standard si mosfets used in high volume.
Like silicon gan can be used to make semiconductor devices such as diodes and transistors.
The real innovation in this specific psu is that it s using gan based semiconductor.
Using infineon s coolgan in wireless power transfer enables high efficiency at higher power levels as well as optimal tuning in class e designs.
Taiwan s iii v semiconductor supply chain players are gearing up to deepen deployments in the segment of gan based power components and rf modules increasingly applied to 5g handsets and other.
A representative gan device is the gan systems gs66516b a 650v enhancement mode gan on silicon power transistor that combines high current high voltage breakdown and high switching frequency figure 2.
The hetero interface between gan and algan forms a two dimensional electron gas 2deg and is the basis for a high mobility channel.
The leader in the design and manufacturing of the highest reliability and only qualified high voltage gallium nitride gan semiconductors today confirmed that its gan fets are used in corsair s new ax1600i power supply unit psu.
Gallium nitride gan is a wide band gap wbg semiconductor material.
Gan s place in the power supply chain most familiar electronic equipment operates from switched mode power supplies smpss which efficiently convert alternating to direct current ac to dc and step line voltages of 110 120 v or 220 240 v down to the 12 5 3 3 v and lower levels needed by system components.
The use of gan as a transistor in switching applications can increase efficiency reduce form factor and extend the operating temperature range.
The ax1600i uses transphorm s tph3205ws 650v fets in a bridgeless totem pole power factor correction pfc topology.
Gan s high speed switching is changing the way power systems look today enabling market trends such as ultra thin power supplies motor drive integrated robotics and achieving 200 more power density in next generation datacenters and 5g rectifiers.
Gallium nitride technology in adapter and charger power supplies is a breakthrough in power density for small and lightweight highly efficient solutions.