Gaas Solar Cell Efficiency

Gaas based devices hold the world record for the highest efficiency single junction solar cell at 29 1 as of 2019.

Gaas solar cell efficiency.

Gaas based single junction solar cells have recently achieved pces of 28 8 setting new photovoltaic efficiency records 1 2 3 4. According to their future plans their solar conversion rate will reach 38 by 2020 and 42 by 2025. Advantage of gaas solar cells. The cell structure consisted on an n doped gaas emitter and p doped gaas base interposed between algaas layers.

Comparing the parameters the voc of our solar cell is much smaller than the highest efficiency solar cell of 3 0 v. Researchers at the university of michigan have designed a new tiny solar cell that can perpetually power millimeter scale computers at high efficiency even in low light conditions. The bottom junction made of gainnas was first grown on a gaas substrate by mbe and then transferred to an mocvd system for subsequent overgrowth of the two top junctions. The solar cell photoelectric conversion efficiency increases by 7 52.

Here for the first time we present the results of the fabrication and characterization of a thin film gaas solar cell with a swcnt top contact. Spectral response measurements were also performed on the devices to give a qualitative insight into their photovoltaic response as a. The authors demonstrate a thin ge free iii v semiconductor triple junction solar cell device structure that achieved 33 8 30 6 and 38 9 efficiencies under the standard 1sun global spectrum s. Triple junction gainp gaas gainnas solar cells with conversion efficiency of 29 at am0 are demonstrated using a combination of molecular beam epitaxy mbe and metal organic chemical vapor deposition mocvd processes.

The gaas solar cell is pictured on top a michigan micro mote surrounded by grains of salt. The fabricated device demonstrates better performance that is increased power conversion efficiency from 10 6 to 11 5 when compared to the cell with the traditional metal contact grid stemming. The most efficient gainp gaas ingaas triple junction solar cell reported so far is a semiconductor rigid substrate solar cell with an efficiency of 37 7. According to fullsuns their current gaas gaas solar cell technology has a maximum conversion rate of 31 6 and this value has been recognized by the national renewable energy laboratory nrel as the world s number one conversion rate.

We examine the contact between the swcnt film and the semiconductor structure by means of the optical and electron beam induced current techniques. Algaas gaas double heterostructure solar cells were fabricated in 10 micron thick films and exhibited one sun total area conversion efficiencies up to 19 5 percent am0 and 22 4 percent am1 5.